JPS62276852A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS62276852A
JPS62276852A JP61119758A JP11975886A JPS62276852A JP S62276852 A JPS62276852 A JP S62276852A JP 61119758 A JP61119758 A JP 61119758A JP 11975886 A JP11975886 A JP 11975886A JP S62276852 A JPS62276852 A JP S62276852A
Authority
JP
Japan
Prior art keywords
source
type
regions
type mos
sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61119758A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558582B2 (en]
Inventor
Takahiko Arakawa
荒川　隆彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61119758A priority Critical patent/JPS62276852A/ja
Priority to US07/024,010 priority patent/US4825273A/en
Priority to DE19873714598 priority patent/DE3714598A1/de
Publication of JPS62276852A publication Critical patent/JPS62276852A/ja
Publication of JPH0558582B2 publication Critical patent/JPH0558582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP61119758A 1986-05-23 1986-05-23 半導体集積回路装置 Granted JPS62276852A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP61119758A JPS62276852A (ja) 1986-05-23 1986-05-23 半導体集積回路装置
US07/024,010 US4825273A (en) 1986-05-23 1987-03-10 Semiconductor integrated circuit device
DE19873714598 DE3714598A1 (de) 1986-05-23 1987-04-29 Integrierte halbleiterschaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61119758A JPS62276852A (ja) 1986-05-23 1986-05-23 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS62276852A true JPS62276852A (ja) 1987-12-01
JPH0558582B2 JPH0558582B2 (en]) 1993-08-26

Family

ID=14769439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61119758A Granted JPS62276852A (ja) 1986-05-23 1986-05-23 半導体集積回路装置

Country Status (3)

Country Link
US (1) US4825273A (en])
JP (1) JPS62276852A (en])
DE (1) DE3714598A1 (en])

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037771A (en) * 1989-11-28 1991-08-06 Cross-Check Technology, Inc. Method for implementing grid-based crosscheck test structures and the structures resulting therefrom
JP2007281147A (ja) * 2006-04-05 2007-10-25 Sanyo Electric Co Ltd Ｃｍｏｓ半導体集積回路装置
JP2010004019A (ja) * 2008-05-22 2010-01-07 Nec Electronics Corp 半導体集積回路

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102342A (ja) * 1986-10-20 1988-05-07 Mitsubishi Electric Corp 半導体集積回路装置の配線構造
US4928160A (en) * 1989-01-17 1990-05-22 Ncr Corporation Gate isolated base cell structure with off-grid gate polysilicon pattern
JPH02198154A (ja) * 1989-01-27 1990-08-06 Hitachi Ltd 配線の形成方法及びこれを利用した半導体装置
US5136356A (en) * 1989-04-19 1992-08-04 Seiko Epson Corporation Semiconductor device
US5250823A (en) * 1989-10-24 1993-10-05 U.S. Philips Corp. Integrated CMOS gate-array circuit
FR2697109B1 (fr) * 1992-10-20 1996-05-24 Fujitsu Ltd Circuit a semiconducteurs ayant une configuration d'implantation perfectionnee.
JPH11145397A (ja) * 1997-11-11 1999-05-28 Mitsubishi Electric Corp 半導体集積回路装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5937858B2 (ja) * 1976-08-11 1984-09-12 セイコーインスツルメンツ株式会社 半導体装置およびその製法
JPS57154869A (en) * 1981-03-20 1982-09-24 Hitachi Ltd Semiconductor device
JPS6017932A (ja) * 1983-07-09 1985-01-29 Fujitsu Ltd ゲ−ト・アレイ
JPH0828480B2 (ja) * 1983-09-30 1996-03-21 富士通株式会社 半導体集積回路装置
JPS6074647A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd 半導体集積回路装置
WO1985002062A1 (en) * 1983-10-31 1985-05-09 Storage Technology Partners Cmos integrated circuit configuration for eliminating latchup
EP0177336B1 (en) * 1984-10-03 1992-07-22 Fujitsu Limited Gate array integrated device
JP2951121B2 (ja) * 1992-08-28 1999-09-20 三洋電機株式会社 ショーケースの配線装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037771A (en) * 1989-11-28 1991-08-06 Cross-Check Technology, Inc. Method for implementing grid-based crosscheck test structures and the structures resulting therefrom
JP2007281147A (ja) * 2006-04-05 2007-10-25 Sanyo Electric Co Ltd Ｃｍｏｓ半導体集積回路装置
JP2010004019A (ja) * 2008-05-22 2010-01-07 Nec Electronics Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH0558582B2 (en]) 1993-08-26
DE3714598A1 (de) 1987-11-26
US4825273A (en) 1989-04-25
DE3714598C2 (en]) 1992-01-09

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